2N7612M1 datasheet by International Rectifier (now Infineon).
| Part number | 2N7612M1 |
|---|---|
| Datasheet | 2N7612M1-InternationalRectifier.pdf |
| File Size | 232.74 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | Power MOSFET |
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The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage parator and operational amplifiers.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| 2N7614M1 | Power MOSFET |
| 2N7617UC | Power MOSFET |
| 2N7604U2 | N-CHANNEL POWER MOSFET |
| 2N7609U8 | Power MOSFET |
| 2N7621T2 | N-CHANNEL POWER MOSFET |
| 2N7627UC | Power MOSFET |
| 2N7632UC | Power MOSFET |
| 2N7522 | P-Channel Transistor |
| 2N7581U2 | POWER MOSFET |
| 2N7588T3 | RADIATION HARDENED POWER MOSFET |
