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International Rectifier Electronic Components Datasheet

2N7612M1 Datasheet

Power MOSFET

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PD-97178
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG77110 100K Rads (Si)
IRHLG73110 300K Rads (Si)
RDS(on)
0.22
0.22
ID
1.8A
1.8A
2N7612M1
IRHLG77110
100V, Quad N-CHANNEL
TECHNOLOGY
™
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 4.5V, TC=25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
1.8
1.1
7.2
1.4
0.01
±10
97
1.8
0.14
11
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
03/20/08
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

2N7612M1 Datasheet

Power MOSFET

No Preview Available !

IRHLG77110, 2N7612M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
1.0
3.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ Max Units
Test Conditions
——
0.11 —
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
— 0.22
VGS = 4.5V, ID = 1.1A Ã
-4.4
10
653
119
2.7
2.0
1.0
10
100
-100
15
2.5
6.0
15
20
65
25
V
mV/°C
S
µA
nA
nC
ns
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 1.1A Ã
VDS= 80V ,VGS= 0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.8A
VDS = 50V
VDD = 50V, ID = 1.8A,
VGS = 4.5V, RG = 7.5
Measured from Drain lead (6mm /0.25in
nH from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
16 —
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 1.8 A
ISM Pulse Source Current (Body Diode) À
— — 7.2
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 100 ns
QRR Reverse Recovery Charge
— — 223 nC
Tj = 25°C, IS = 1.8A, VGS = 0V Ã
Tj = 25°C, IF = 1.8A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 90 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number 2N7612M1
Description Power MOSFET
Maker International Rectifier
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