Download 2N7614M1 Datasheet PDF
International Rectifier
2N7614M1
2N7614M1 is Power MOSFET manufactured by International Rectifier.
PD-97339 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) IRHLG77214 100K Rads (Si) 1.1Ω IRHLG73214 300K Rads (Si) 1.1Ω ID 0.8A 0.8A 2N7614M1 IRHLG77214 250V, Quad N-CHANNEL TECHNOLOGY ™ International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to...