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International Rectifier Electronic Components Datasheet

2N7614M1 Datasheet

Power MOSFET

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PD-97339
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG77214 100K Rads (Si)
IRHLG73214 300K Rads (Si)
RDS(on)
1.1
1.1
ID
0.8A
0.8A
2N7614M1
IRHLG77214
250V, Quad N-CHANNEL
TECHNOLOGY
™
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
MO-036AB
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC= 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
0.8
0.5
3.2
1.4
0.01
±10
50.4
0.8
0.14
12.3
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
02/25/11
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

2N7614M1 Datasheet

Power MOSFET

No Preview Available !

IRHLG77214, 2N7614M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Coefficient
gfs Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
1.0
1.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ Max Units
Test Conditions
——
0.34 —
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
— 1.1
VGS = 4.5V, ID = 0.5A Ã
-6.0
10
552
69
1.43
2.0
1.0
10
100
-100
15
3.5
8.3
18
85
35
30
V
mV/°C
S
µA
nA
nC
ns
VDS = VGS, ID = 250µA
VDS = 15V, IDS = 0.5A Ã
VDS= 200V ,VGS= 0V
VDS = 200V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.8A
VDS = 125V
VDD = 125V, ID = 0.8A,
VGS = 4.5V, RG = 7.5
Measured from Drain lead (6mm /0.25in
nH from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
VGS = 0V, VDS = 25V
pF f = 1.0MHz
6.77 —
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 0.8 A
ISM Pulse Source Current (Body Diode) À
— — 3.2
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 290 ns
QRR Reverse Recovery Charge
— — 388 nC
Tj = 25°C, IS = 0.8A, VGS = 0V Ã
Tj = 25°C, IF = 0.8A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 90 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number 2N7614M1
Description Power MOSFET
Maker International Rectifier
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