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International Rectifier Electronic Components Datasheet

3710S Datasheet

IRF3710S

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PD - 94201A
IRF3710S
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
IRF3710L
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 23m
G
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
D2Pak
IRF3710S
TO-262
IRF3710L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V‡
Continuous Drain Current, VGS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
57
40
180
200
1.3
± 20
28
20
5.8
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
www.irf.com
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
12/30/02


International Rectifier Electronic Components Datasheet

3710S Datasheet

IRF3710S

No Preview Available !

IRF3710S/IRF3710L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
EAS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚‡
Min. Typ. Max. Units
100 ––– ––– V
––– 0.13 ––– V/°C
––– ––– 23 m
2.0 ––– 4.0 V
32 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 130
––– ––– 26 nC
––– ––– 43
––– 12 –––
––– 58 –––
ns
––– 45 –––
––– 47 –––
––– 4.5 –––
––– 7.5 –––
nH
––– 3130 –––
––– 410 –––
––– 72 –––
––– 1060…280†
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA‡
VGS = 10V, ID =28A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28A„‡
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 28A
VDS = 80V
VGS = 10V, See Fig. 6 and 13‡
VDD = 50V
ID = 28A
RG = 2.5
VGS = 10V, See Fig. 10 „‡
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5‡
IAS = 28A, L = 0.70mH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.70mH, RG = 25,
IAS = 28A, VGS=10V. (See Figure 12).
ƒ ISD 28A, di/dt 380A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 57
A showing the
integral reverse
––– ––– 230
p-n junction diode.
G
D
S
––– ––– 1.2 V TJ = 25°C, IS = 28A, VGS = 0V „
––– 140 220 ns TJ = 25°C, IF = 28A
––– 670 1010 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Uses IRF3710 data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
2 www.irf.com


Part Number 3710S
Description IRF3710S
Maker International Rectifier
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3710S Datasheet PDF






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