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International Rectifier Electronic Components Datasheet

40MT120UHA Datasheet

NPT IGBT

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Bulletin I27194 rev. A 01/06
"HALF-BRIDGE" IGBT MTP
40MT120UHA
40MT120UHTA
UltraFast NPT IGBT
Features
UltraFast Non Punch Through (NPT)
Technology
• Positive VCE(ON)Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED TM Antiparallel Diodes with
UltraSoft Reverse Recovery and Low VF
• Square RBSOA
• Al2O3 DBC
• Optional SMD Thermistor (NTC)
• Very Low Stray Inductance Design for
High Speed Operation
Benefits
Optimized for Welding, UPS and SMPS
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal Resis
tance
Absolute Maximum Ratings
Parameters
VCES
IC
I CM
I LM
IF
I FM
VGE
VISOL
PD
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
@ TC = 22°C
@ TC = 104°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 105°C
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
@ TC = 25°C
@ TC = 100°C
VCES = 1200V
IC = 80A
MMTP
Max
1200
80
40
160
160
21
160
± 20
2500
463
185
Units
V
A
V
W
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1


International Rectifier Electronic Components Datasheet

40MT120UHA Datasheet

NPT IGBT

No Preview Available !

40MT120UHA, 40MT120UHTA
Bulletin I27194 rev. A 01/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
V(BR)CES/ Temperature Coeff. of
TJ
Breakdown Voltage
VCE(ON) Collector-to-Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
4
VGE(th)/ Temperature Coeff. of
TJ
Threshold Voltage
gfe
Transconductance
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
+1.1
3.36
4.53
3.88
5.35
-12
35
0.4
0.2
V VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 3mA (25-125°C)
3.59 V VGE = 15V, IC = 40A
4.91
VGE = 15V, IC = 80A
4.10
VGE = 15V, IC = 40A TJ = 150°C
5.68
VGE = 15V, IC = 80A TJ = 150°C
6
V VCE = VGE, IC = 500µA
mV/°C VCE = VGE, IC = 1mA (25-125°C)
S VCE = 50V, IC = 40A, PW = 80µs
250 µA VGE = 0V, VCE = 1200V, TJ = 25°C
1.0 mA VGE = 0V, VCE = 1200V, TJ = 125°C
10
VGE = 0V, VCE = 1200V, TJ = 150°C
±250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg
Total Gate Charge (turn-on)
Qge
Gate-Emitter Charge (turn-on)
Qgc
Gate-Collector Charge (turn-on)
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Etot
Total Switching Loss
Cies
Coes
Cres
RBSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area
399
43
187
1142
1345
2487
599
65
281
1713
2018
3731
1598
1618
3216
2397
2427
4824
5521 8282
380 570
171 257
full square
10
nC IC = 40A
VCC = 600V
VGE = 15V
µJ VCC = 600V, IC = 40A
VGE = 15V, Rg = 5, L = 200µH
TJ = 25°C, Energy losses include tail
and diode reverse recovery
µJ VCC = 600V, IC = 40A
VGE = 15V, Rg = 5, L = 200µH
TJ = 125°C, Energy losses include tail
and diode reverse recovery
pF VGE = 0V
VCC = 30V
f = 1.0 MHz
TJ = 150°C, IC = 160A
VCC = 1000V, Vp = 1200V
Rg = 5, VGE = +15V to 0V
µs TJ = 150°C
VCC = 900V, Vp = 1200V
Rg = 5, VGE = +15V to 0V
2
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Part Number 40MT120UHA
Description NPT IGBT
Maker International Rectifier
PDF Download

40MT120UHA Datasheet PDF






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