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International Rectifier Electronic Components Datasheet

4GBU08F Datasheet

4.0 Amps Single Phase Full Wave

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PART OBSOLETE - EOL18
Bulletin I2717 rev. G 05/02
4.0 Amps Single Phase Full Wave
4GBU Series
Bridge Rectifier
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 VRMS)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
IO(AV) = 4A
VRRM = 50/ 800V
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
4GBU
Units
IO
@ TC
IFSM @50Hz
@ 60Hz
I2t @ 50Hz
@ 60Hz
VRRM range
TJ
4
100
150
158
113
104
50 to 800
- 55 to 150
A
°C
A
A
A2s
A2s
V
oC
4GBU
www.irf.com
1


International Rectifier Electronic Components Datasheet

4GBU08F Datasheet

4.0 Amps Single Phase Full Wave

No Preview Available !

4GBU Series
Bulletin I2717 rev. G 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VRRM , max repetitive
peak rev. voltage
TJ = TJ max.
V
4GBU
4GBU...F
005
01
02
04
06
08
50
100
200
400
600
800
VRMS , max RMS
voltage
TJ = TJ max.
V
35
70
140
280
420
560
IRRM max.
@ rated VRRM
TJ = 25°C
µA
5
5
5
5
5
5
IRRM max.
@ rated VRRM
TJ = 150°C
µA
400
400
400
400
400
400
Forward Conduction
Parameters
IO Maximum DC output current
IFSM
I2t
VFM
IRM
VRRM
Maximum peak, one-cycle
non-repetitive surge current,
following any rated load condition
and with rated VRRM reapplied
Maximum I2t for fusing,
initial TJ = TJ max
Maximum peak forward voltage
per diode
Typical peak reverse leakage
curren t per diode
Maximum repetitive peak
reverse voltage range
4GBU
4
3.2
150
158
113
104
1.0
5
50 to 800
Unit
A
Conditions
TC = 100°C, Resistive & inductive load
TC = 100°C, Capacitive load
t = 10ms
t = 8.3ms
TJ = 150°C
A2s t = 10ms
t = 8.3ms
V TJ = 25 oC, IFM = 4A
µA TJ = 25 oC, 100% VRRM
V
Thermal and Mechanical Specifications
Parameters
4GBU
Unit Conditions
TJ
Tstg
RthJC
RthJA
W
T
Operating and storage
temperature range
Max. thermal resistance
junction to case
Thermal resistance,
junction to ambient
Approximate weight
Mounting Torque
-55 to 150
4.2
22
4 (0.14)
1.0
9.0
oC
°C/ W DC rated current through bridge (1)
°C/ W DC rated current through bridge (1)
g (oz)
Nm
Lb.in
Bridge to Heatsink
Note (1): Devices mounted on 40x 40x1.5mm aluminum plate; use silicon thermal compound for maximum
heat transfer and bolt down using 3mm screw
2 www.irf.com


Part Number 4GBU08F
Description 4.0 Amps Single Phase Full Wave
Maker International Rectifier
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4GBU08F Datasheet PDF






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International Rectifier





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