50MT060ULS
I27123 rev. C 02/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600
VCE(on) Collector-to-Emitter Voltage
VGE(th) Gate Threshold Voltage
BVR Diode Reverse Breakdown Voltage
∆VGE(th)/ Temperature Coeff. of
∆TJ Threshold Voltage
gfe Forward Transconductance
ICES
Collector-to-Emiter Leaking Current
3
600
22
VFM Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
1.69
1.96
1.88
- 13
2.31
2.55
2.24
6
V
mV/°C
VGE = 0V, IC = 250µA
VGE = 15V, IC = 50A
VGE = 15V, IC = 100A
VGE = 15V, IC = 100A, TJ = 150°C
IC = 0.5mA
IR = 200µA
VCE = VGE, IC = 500µA
29 S VCE = 50V, IC = 100A
0.25 mA VGE = 0V, VCE = 600V
6 VGE = 0V, VCE = 600V, TJ = 150°C
1.64 1.82 V IF = 100A, VGE = 0V
1.56 1.74
IF = 100A, VGE = 0V, TJ = 150°C
± 250 nA VGE = ± 20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg Total Gate Charge (turn-on)
Qge Gate-Emitter Charge (turn-on)
Qgc Gate-Collector Charge (turn-on)
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Cies
Coes
Cres
Ct
trr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Junction Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Current
Qrr Diode Recovery Charge
di(rec)M/dt Diode PeakRate of Fall of Recovery
During tb
370
64
163
0.7
1.7
2.4
1.1
2.5
3.6
9800
602
121
118
99
6.5
320
236
555
96
245
1.2
2.6
3.8
1.7
3.8
5.5
14700
903
182
177
150
9.8
735
nC
mJ
mJ
pF
ns
A
nC
A/µs
IC = 100A
VCC = 480V
VGE = 15V
IC = 50A, VCC = 480V, VGE = 15V,
Rg = 5Ω
Energy losses include tail and diode reverse
recovery
IC = 50A, VCC = 480V, VGE = 15V
Rg = 5Ω, TJ = 125°C
Energy losses include tail and diode reverse
recovery
VGE = 0V
VCC = 30V
f = 1.0 MHz
Vr = 600V, f = 1.0 MHz
VCC = 480V, IC = 50A
di/dt = 200A/µs
Rg = 5Ω
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