Datasheet4U Logo Datasheet4U.com

AUIRF2804 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited).

📥 Download Datasheet

Full PDF Text Transcription for AUIRF2804 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRF2804. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allo...

View more extracted text
e 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .