Download the AUIRF2804L datasheet PDF.
This datasheet also covers the AUIRF2804 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area.
Key Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
HEXFET® Power MOSFET
D
AUIRF2804 AUIRF2804S AUIRF2804L
40V max. 2.0mΩk 1.5mΩk 270A c
V(BR)DSS RDS(on) typ. G S
ID (Silicon Limited).
Note: The manufacturer provides a single datasheet file (AUIRF2804_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF2804L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF2804L. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allo...
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e 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRF2804L Datasheet
