AUIRF5210S mosfet equivalent, power mosfet.
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Advanced Planar Technology P-Channel MOSFET Low On-Resistance
Dynamic dV/dT Rating
D
V(BR)DSS RDS(on) max. ID
175°C Operating Temperature Fast Switchi.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
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