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AUIRF5210S - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D.

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📁 Similar Datasheet

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AUIRF5210S Power MOSFET Infineon
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF540Z HEXFET Power MOSFET
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Full PDF Text Transcription

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AUTOMOTIVE GRADE AUIRF5210S HEXFET® Power MOSFET -100V 60m -38A Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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