AUIRF7342Q mosfet equivalent, power mosfet.
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AUIRF7342Q
3.5 3.0
-I D, Drain Current (A)
2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 T A , Ambient Temperature (°C)
Fig 13. Maximum Drain Cur.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
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