AUIRF7665S2TR1 Datasheet N-Channel MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96286 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7665S2TR AUIRF7665S2TR1 DirectFET Power MOSFET V(BR)DSS 100V RDS(on) typ. 51mΩ max. 62mΩ RG (typical) 3.5Ω Qg (typical) 8.

Download the AUIRF7665S2TR1 datasheet PDF. This datasheet also includes the AUIRF7665S2TR variant, as both parts are published together in a single manufacturer document.

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AUIRF7665S2TR1 n-channel mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	AUIRF7665S2TR1
Manufacturer	International Rectifier (now Infineon)
File Size	380.76 KB
Description	N-Channel MOSFET
Download	AUIRF7665S2TR1 Download (PDF)

General Description

The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Key Features

combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C www. DataSheet4U. com ID @ TC = 100°C ID @ TA = 25°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TA = 25°C EAS EAS(tested) IAR EAR TP TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Silicon Limited)f Continuous Drain Current, VGS @ 10V (Package Li.

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