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AUIRF7732S2TR - Power MOSFET

Description

The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription

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AUIRF7732S2PbF AUIRF7732S2TR/TR1 • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS and Halogen free D G DirectFET® Power MOSFET ‚ V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 5.5mΩ 6.
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