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AUIRF7732S2TR1 - Power MOSFET

Download the AUIRF7732S2TR1 datasheet PDF. This datasheet also covers the AUIRF7732S2TR variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF7732S2TR-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7732S2TR Power MOSFET Infineon
AUIRF7734M2TR Power MOSFET Infineon
AUIRF7736M2TR Power MOSFET Infineon
AUIRF7738L2TR Power MOSFET Infineon
AUIRF7739L2 Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF7732S2TR Power MOSFET
AUIRF7734M2TR Power MOSFET
AUIRF7734M2TR1 Power MOSFET
AUIRF7736M2TR Power MOSFET
AUIRF7736M2TR1 Power MOSFET

Full PDF Text Transcription

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AUIRF7732S2PbF AUIRF7732S2TR/TR1 • Advanced Process Technology • Optimized for Automotive DC-DC, Motor Drive and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead free, RoHS and Halogen free D G DirectFET® Power MOSFET ‚ V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 40V 5.5mΩ 6.
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