AUIRF7737L2TR1, AUIRF7737L2TR Datasheet - International Rectifier

AUIRF7737L2TR1 Power MOSFET

The AUIRF7737L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with exis.

PD - 96315C AUIRF7737L2TR AUTOMOTIVE GRADE AUIRF7737L2TR1 Automotive DirectFET® Power MOSFET Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead Fr.

AUIRF7737L2TR1 Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Absolute Maximum Ratings Stresses beyond those listed under “Abso

AUIRF7737L2TR1, AUIRF7737L2TR Datasheet