Datasheet4U Logo Datasheet4U.com

AUIRF7738L2TR1 - Power MOSFET

Download the AUIRF7738L2TR1 datasheet PDF. This datasheet also covers the AUIRF7738L2TR variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The AUIRF7738L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.The DirectFET® package is compatible with exist

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF7738L2TR-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7738L2TR Power MOSFET Infineon
AUIRF7732S2TR Power MOSFET Infineon
AUIRF7734M2TR Power MOSFET Infineon
AUIRF7736M2TR Power MOSFET Infineon
AUIRF7739L2 Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRF7738L2TR Power MOSFET
AUIRF7732S2TR Power MOSFET
AUIRF7732S2TR1 Power MOSFET
AUIRF7734M2TR Power MOSFET
AUIRF7734M2TR1 Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 96333A AUTOMOTIVE GRADE • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and • • • • • • other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free • Automotive Qualified * Applicable DirectFET® Outline and Substrate Outline  Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 1.2mΩ max. ID (Silicon Limited) Qg 1.
Published: |