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AUIRF7805Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Planar Technology l Low On-Resistance l Logic Level l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free, RoHS Compliant AUIRF7805Q HEXFET® Power MOSFET S1 S2 S3 G4 VAA 8D (BR)DSS 30V 7D 6D 5D RDS(on) typ. 9.2mΩ max. 11mΩ Top View ID 13A.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7805Q Power MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD – 96367B Features l Advanced Planar Technology l Low On-Resistance l Logic Level l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free, RoHS Compliant AUIRF7805Q HEXFET® Power MOSFET S1 S2 S3 G4 VAA 8D (BR)DSS 30V 7D 6D 5D RDS(on) typ. 9.2mΩ max. 11mΩ Top View ID 13A Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.