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AUIRFN8458 - Dual N-Channel MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Dual N-Channel MOSFET.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFN8459 Dual N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  AUTOMOTIVE GRADE AUIRFN8458 VDSS RDS(on) typ. max ID (@TC (Bottom) = 25°C     Features  Advanced Process Technology  Dual N-Channel MOSFET  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this produuct an extremely efficient and reliable devoce for use in Automotive and wide variety of other applications.