Datasheet Summary
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- 96320
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
V(BR)DSS
Features l l l l l l l
55V 11.1mΩ 14.5mΩ
59A k 42A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified
- RDS(on) typ.
G S max.
ID (Silicon Limited) ID (Package Limited)
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and...
