Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
HEXFET® Power MOSFET
D
G S
V(BR)DSS RDS(on) typ. max. ID.
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AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 300V 148m 185m 19A Features ● ● ● ● ● ● ● Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switchi...
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Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D G S V(BR)DSS RDS(on) typ. max. ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .