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AUIRFSL4010 - Power MOSFET

Download the AUIRFSL4010 datasheet PDF. This datasheet also covers the AUIRFS4010 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • AUIRFSL4010 l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 3.9m: :G max. 4.7m S ID 180A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFS4010-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFSL4115 Power MOSFET Infineon
AUIRFSL4127 Power MOSFET Infineon
AUIRFSL4127 Power MOSFET Infineon
AUIRFSL4310 Power MOSFET Infineon
AUIRFSL3004 Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFSL4310 HEXFET Power MOSFET
AUIRFSL4410Z HEXFET Power MOSFET
AUIRFSL3004 Power MOSFET
AUIRFSL3107 Power MOSFET
AUIRFSL3206 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE PD - 96396A AUIRFS4010 Features AUIRFSL4010 l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 3.9m: :G max. 4.7m S ID 180A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .