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AUIRFU024N - Power MOSFET

Download the AUIRFU024N datasheet PDF. This datasheet also covers the AUIRFR024N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Features

  • l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 0.075Ω 17A G S RDS(on) max. ID D g D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR024N-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFU120Z Power MOSFET Infineon
AUIRFU4105Z Power MOSFET Infineon
AUIRFU4292 Power MOSFET Infineon
AUIRFU5305 Power MOSFET Infineon
AUIRFU540Z Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFU120Z Power MOSFET
AUIRFU3607 Advanced Process Technology
AUIRFU4104 Power MOSFET
AUIRFU4105Z HEXFET Power MOSFET
AUIRFU4292 Power MOSFET

Full PDF Text Transcription

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AUTOMOTIVE GRADE PD - 96355 Features l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V 0.075Ω 17A G S RDS(on) max. ID D g D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
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