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AUIRFU9024N Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the AUIRFU9024N datasheet PDF. This datasheet also includes the AUIRFR9024N variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AUIRFR9024N-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

D D G D S G D S D-Pak AUIRFR9024N G D I-Pak AUIRFU9024N S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Overview

AUTOMOTIVE GRADE PD - 96351.

Key Features

  • l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • D AUIRFR9024N AUIRFU9024N HEXFET® Power MOSFET V(BR)DSS -55V 0.175Ω -11A G S RDS(on) max. ID.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo AUIRFU9024N Power MOSFET Infineon

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