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AUIRG4PC40S-E Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview

  AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor.

Key Features

  •  Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
  •  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  •  Industry standard TO-247AD package.
  •  Lead-Free.
  •  Automotive Qualified.
  • C  G E n-channel  C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.32V @ VGE = 15V, IC = 31A Benefits.
  •  Generation 4 IGBT's offer highest efficiency available.
  •  IGBT's optimized for specifi.