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AUIRGP35B60PD-E - IGBT

Key Features

  • NPT Technology, Positive Temperature Coefficient.
  • Lower VCE(SAT).
  • Lower Parasitic Capacitances.
  • Minimal Tail Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE PD - 97619 AUIRGP35B60PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability • Lead-Free, RoHS Compliant • Automotive Qualified* Applications • PFC and ZVS SMPS Circuits • DC/DC Converter Charger Benefits • Parallel Operation for Higher Current Applications • Lower Conduction Losses and Switching Losses • Higher Switching Frequency up to 150KHz C G E n-channel VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters RCE(on) typ.