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International Rectifier Electronic Components Datasheet

AUIRGPS4067D1 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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AUTOMOTIVE GRADE
PD - 97726C
AUIRGPS4067D1
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
6μs SCSOA
Square RBSOA
100% of the parts tested for ILM 
Positive VCE (on) Temperature Coefficient
Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant
Automotive Qualified *
C
G
E
n-channel
VCES = 600V
IC = 160A, TC = 100°C
tSC 6μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
C
Benefits
High Efficiency in a Wide Range of Applications
Suitable for Applications in the Low to Mid-Rrange
Frequencies
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
E
GC
Super-247
AUIRGPS4067D1
GC
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF NOMINAL
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
dDiode Nominal Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
*Qualification standards can be found at http://www.irf.com/
1
600
240g
160
120
360
480
120g
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.20
0.44
–––
–––
Units
°C/W
www.irf.com
09/27/2012


International Rectifier Electronic Components Datasheet

AUIRGPS4067D1 Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

AUIRGPS4067D1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter BreakdownVoltage
Min. Typ. Max. Units Conditions
600 — —
eV VGE = 0V, IC = 500μA
V(BR)CE S/T J T emperatureCoeff. of B reakdownVoltage
— 0.27 — V/°C VGE = 0V, IC = 15mA (25°C-175°C)
— 1.70 2.05
IC = 120A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.15 —
V IC = 120A, VGE = 15V, TJ = 150°C
— 2.20 —
IC = 120A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
4.0 — 6.5
V VCE = VGE, IC = 5.6mA
VGE(th)/T J
Threshold Voltage temp. coefficient
— -17 — mV/°C VCE = VGE, IC = 20mA (25°C - 175°C)
gfe Forward Transconductance
— 85 —
S VCE = 50V, IC = 120A
ICES
Collector-to-Emitter Leakage Current
— 2.3 200 μA VGE = 0V, VCE = 600V
— 9.4 — mA VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop
— 1.9 2.2
— 2.0 —
V IF = 120A
IF = 120A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 240 360
IC = 120A
Qge Gate-to-Emitter Charge (turn-on)
— 69 104 nC VGE = 15V
Qgc
Gate-to-Collector Charge (turn-on)
— 90 135
VCC = 400V
Eon Turn-On Switching Loss
— 8.2 10
IC = 120A, VCC = 400V, VGE = 15V
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 2.9 3.2 mJ RG = 4.7, L = 87μH, TJ = 25°C
— 11.1 13.2
E nergy los s es include tail & diode revers e recovery
td(on) Turn-On delay time
— 69 82
IC = 120A, VCC = 400V, VGE = 15V
tr Rise time
— 65 82 ns RG = 4.7, L = 87μH, TJ = 25°C
td(off) Turn-Off delay time
— 198 230
tf Fall time
— 38 48
Eon
Eoff
Etotal
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
— 10 —
— 3.8 —
— 13.8 —
IC = 120A, VCC = 400V, VGE=15V
mJ RG = 4.7, L = 87μH, TJ = 175°C
E nergy los s es include tail & diode revers e recovery
td(on) Turn-On delay time
— 63 —
IC = 120A, VCC = 400V, VGE = 15V
tr Rise time
— 64 — ns RG = 4.7, L = 200μH
td(off) Turn-Off delay time
— 230 —
TJ = 175°C
tf Fall time
— 51 —
Cies Input Capacitance
— 7780 —
pF VGE = 0V
Coes Output Capacitance
Cres Reverse Transfer Capacitance
— 505 —
— 245 —
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 480A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
Rg = 4.7, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operating Area
6 — — μs VCC = 400V, Vp =600V
Rg = 1.0, VGE = +15V to 0V
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
— 2440 —
— 360 —
μJ TJ = 175°C
ns VCC = 400V, IF = 120A
Irr
Peak Reverse Recovery Current
— 53 —
A VGE = 15V, Rg = 4.7, L =87μH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 0.87μH, RG = 50tested in production ILM 400A.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Ris measured at TJ of approximately 90°C.
… Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.
2 www.irf.com


Part Number AUIRGPS4067D1
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 13 Pages
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