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AUIRGSL4062D1 - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the AUIRGSL4062D1, a member of the AUIRGB4062D1 INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • 5μs SCSOA.
  • Square RBSOA.
  • 100% of The Parts Tested for ILM.
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode.
  • Tighter Distribution of Parameters.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • Benefits.
  • High Efficiency in a Wide Range of.

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Full PDF Text Transcription

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AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5μs SCSOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.
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