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AUIRL7736M2TR - Power MOSFET

General Description

The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET ® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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Full PDF Text Transcription (Reference)

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PD - 97656 AUTOMOTIVE GRADE AUIRL7736M2TR AUIRL7736M2TR1 DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 2.2mΩ max. 3.