AUIRLR014N mosfet equivalent, hexfet power mosfet.
ent (A)
1000 100 10
OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 100us
1ms
1 10ms
TC TJ
= =
25 ° C 175 ° C
Single Pulse
0.1
1
10
100
VDS , Drain-to-Source .
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
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