AUIRLR014N Datasheet - International Rectifier

HEXFET Power MOSFET

AUIRLR014N Features

* g TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Fig 13a. Basic Gate Charge Waveform www.irf.com Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + -VDS VGS 3mA I

AUIRLR014N General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRLR014N Datasheet (211.15 KB)

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AUIRLR014N

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International Rectifier

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211.15 KB

Description:

Hexfet power mosfet.
AUTOMOTIVEGRADE PD - 97740 Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT.

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AUIRLR014N HEXFET Power MOSFET International Rectifier

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AUIRLR014N Features

AUIRLR014N General Description

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