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AUIRLR120N - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D. U. T. 50KΩ 5.0 V QGS VG QG QGD 12V .2µF .3µF D. U. T. VGS 3mA + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www. irf. com 7 AUIRLR120N Peak Diode Recovery dv/dt Test Circuit D. U. T Circuit Layout Considerations.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97624 AUTOMOTIVE GRADE AUIRLR120N HEXFET® Power MOSFET D • • • • • • • • • • Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175ºC Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS RDS(on) max. ID D 100V 0.185Ω 10A G S Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.