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AUIRLR120N Datasheet - International Rectifier

Power MOSFET

AUIRLR120N Features

* A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 5.0 V QGS VG QG QGD 12V .2µF .3µF D.U.T. VGS 3mA + V - DS Charge IG ID Current Samp

AUIRLR120N General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRLR120N Datasheet (271.85 KB)

Preview of AUIRLR120N PDF

Datasheet Details

Part number:

AUIRLR120N

Manufacturer:

International Rectifier

File Size:

271.85 KB

Description:

Power mosfet.
PD - 97624 AUTOMOTIVE GRADE AUIRLR120N HEXFET® Power MOSFET D

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AUIRLR120N Power MOSFET International Rectifier

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