AUIRLR2703 Datasheet - International Rectifier

Power MOSFET

AUIRLR2703 Features

* nclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 160 I D TOP 5.7A 9.9A BOTTOM 14A 120 80 40 0 VDD = 15V A 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped In

AUIRLR2703 General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRLR2703 Datasheet (267.07 KB)

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Part number:

AUIRLR2703

Manufacturer:

International Rectifier

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267.07 KB

Description:

Power mosfet.
AUTOMOTIVEGRADE PD - 97620 AUIRLR2703 Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dy.

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AUIRLR2703 Power MOSFET International Rectifier

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AUIRLR2703 Features

AUIRLR2703 General Description

Datasheet Details

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