AUIRLU2905 Datasheet - International Rectifier

HEXFET Power MOSFET

AUIRLU2905 Features

* J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 10 V QGS VG QG QGD Charge Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13a. Basic Gate

AUIRLU2905 General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRLU2905 Datasheet (246.27 KB)

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AUIRLU2905

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International Rectifier

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246.27 KB

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Hexfet power mosfet.
AUTOMOTIVE GRADE AUIRLR2905 AUIRLU2905 Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance D.

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AUIRLU2905 HEXFET Power MOSFET International Rectifier

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AUIRLU2905 Features

AUIRLU2905 General Description

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