900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

B17N60K Datasheet

IRFB17N60K

No Preview Available !

PD - 94578
www.datasheet4u.com
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
VDSS
600V
IRFB17N60K
HEXFET® Power MOSFET
RDS(on) typ.
0.35
ID
17A
Benefits
l Smaller TO-220 Package
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Max.
17
11
68
340
2.7
± 30
11
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
N
Typ.
–––
–––
–––
Max.
330
17
34
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.37
–––
58
Units
°C/W
www.irf.com
1
11/19/02


International Rectifier Electronic Components Datasheet

B17N60K Datasheet

IRFB17N60K

No Preview Available !

IRFB17N60K
www.datasheet4uS.ctoamtic @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
600 ––– ––– V VGS = 0V, ID = 250µA
––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.35 0.42 VGS = 10V, ID = 10A „
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50 µA VDS = 600V, VGS = 0V
––– ––– 250 µA VDS = 480V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs Forward Transconductance
5.9 ––– –––
Qg Total Gate Charge
––– ––– 99
Qgs Gate-to-Source Charge
––– ––– 32
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 47
td(on)
Turn-On Delay Time
––– 25 –––
tr Rise Time
––– 82 –––
td(off)
Turn-Off Delay Time
––– 38 –––
tf Fall Time
––– 32 –––
Ciss Input Capacitance
––– 2700 –––
Coss
Output Capacitance
––– 240 –––
Crss Reverse Transfer Capacitance
––– 21 –––
Coss
Output Capacitance
––– 2950 –––
Coss
Output Capacitance
––– 67 –––
Coss eff. Effective Output Capacitance
––– 120 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 10A
ID = 17A
VDS = 480V
VGS = 10V, See Fig. 6 and 13 „
VDD = 300V
ID = 17A
RG = 7.5
VGS = 10V,See Fig. 10
„
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V …
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 2.3mH, RG = 25,
IAS = 17A,
2
Min. Typ. Max. Units
Conditions
––– ––– 17
––– ––– 68
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 17A, VGS = 0V „
––– 520 780 ns TJ = 25°C, IF = 17A
––– 5620 8430 nC di/dt = 100A/µs „
––– 580 870 ns TJ = 125°C, IF = 17A
––– 6470 9700 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ƒ ISD 17A, di/dt 380A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
www.irf.com


Part Number B17N60K
Description IRFB17N60K
Maker International Rectifier
PDF Download

B17N60K Datasheet PDF






Similar Datasheet

1 B17N60K IRFB17N60K
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy