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B31N20D - IRFB31N20D

Key Features

  • ) 3X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X N O TE S : 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) M B A M www. DataSheet. co. kr 3X 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 0 .3 6 (.0 1 4 ) 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB31N20D and Current l D2Pak IRFS31N20D TO-262 IRFSL31N20D Absolute Maximum Ratings www.DataSheet.co.