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International Rectifier Electronic Components Datasheet

B31N20D Datasheet

IRFB31N20D

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SMPS MOSFET
PD- 93805B
IRFB31N20D
IRFS31N20D
IRFSL31N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.082
ID
31A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB31N20D
D2Pak
TO-262
IRFS31N20D IRFSL31N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
www.DataSheet.co.kr
Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V Input Forward Converters
Notes  through ‡ are on page 11
www.irf.com
1
2/14/00
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International Rectifier Electronic Components Datasheet

B31N20D Datasheet

IRFB31N20D

No Preview Available !

IRFB/IRFS/IRFSL31N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
200
–––
–––
3.0
–––
–––
–––
–––
––– –––
0.25 –––
––– 0.082
––– 5.5
––– 25
––– 250
––– 100
––– -100
V
V/°C
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 18A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
17 ––– –––
––– 70 110
––– 18 27
––– 33 49
––– 16 –––
––– 38 –––
––– 26 –––
––– 10 –––
––– 2370 –––
––– 390 –––
––– 78 –––
–––
–––
2860
www.DataSheet.co.kr
150
–––
–––
––– 170 –––
S VDS = 50V, ID = 18A
ID = 18A
nC VDS = 160V
VGS = 10V, „
VDD = 100V
ns ID = 18A
RG = 2.5
RD = 5.4„
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
420
18
20
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface †
RθJA
Junction-to-Ambient†
RθJA
Junction-to-Ambient‡
Diode Characteristics
–––
0.50
–––
–––
0.75
––– °C/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
MOSFET symbol
––– ––– 31
A showing the
integral reverse
––– ––– 124
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „
––– 200 300 ns TJ = 25°C, IF = 18A
––– 1.7 2.6 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number B31N20D
Description IRFB31N20D
Maker International Rectifier
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B31N20D Datasheet PDF






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