COM150A Datasheet | International Rectifier

FEATURES - - - - Isolated Hermetic Metal Package Fast Switching Low RDS(on) Standard Off-The-Shelf DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS @ PART NUMBER 150A 250A 350A 450A 25° C VD S 100 V 200 V 400 V 500 V R DS(on) .070 .100 .32 .42 I D 25 A 20 A 12 A 10 A 3 . 1 S C H E M ATIC POWER RATING .. .. 8.. 09 R0 3 . 1- 1 3 . 1 150A - 450A ELECTRICAL CHARACTERISTICS: STATIC Parameter B VDSS V GS(th) I GSSF I GSSR I DSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 35 1 . 1 0 . 1 0 . 2 ( TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: STATIC P/N 250A Parameter B VD S S V GS(th) I GSSF I GSSR I DSS Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current I D(on) V DS(on) R DS(on) R DS(on) On-State Drain Current1 Static Drain-Source On-State Voltage1 Static Drain-Source On-State Resistance1 Static Drain-Source On-State Resistance1 30 0 . 1 0 . 2 ( TC = 25°C unless otherwise noted) P/N 150A Min. Typ. Max. Units Test Conditions 100 2 . 0 4 . 0 100 -1 0 0 0.25 1 . 0 V V n A n A m A m A A 1 . 3 V VG S = 0 , I D = 250 m A V D S = VG S, ID = 250 m A V G S = +20 V V G S = -20 V V D S = Max. Rat., VG S = 0 V D S = 0.8 Max. Rat., VG S = 0 , TC = 125° C VD S 2 VDS(on),VG S = 10 V Min. Typ. Max. Units Test Conditions 200 2 . 0 4 . 0 100 -100 0.25 1 . 0 V V n A n A...