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International Rectifier Electronic Components Datasheet

COM350A Datasheet

(COM150A - COM450A) Power MOSFET

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COM150A COM350A
COM250A COM450A
(COTS) COMMERCIAL OFF-THE-SHELF
POWER MOSFET IN A TO-254AA PA C K A G E
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
F E AT U R E S
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Standard Off-The-Shelf
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS @ 25°C
PART NUMBER
COM150A
COM250A
COM350A
COM450A
S C H E M ATIC
VDS
100 V
200 V
400 V
500 V
R DS(on)
.070
.100
.32
.42
ID
25 A
20 A
12 A
10 A
POWER RATING
3.1
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International Rectifier Electronic Components Datasheet

COM350A Datasheet

(COM150A - COM450A) Power MOSFET

No Preview Available !

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM150A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
VG S = 0,
100 V
ID = 250 mA
2.0 4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = +20 V
- 100 nA VG S = -20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
VD S = 0.8 Max. Rat., VG S = 0,
0.2 1.0 m A
TC = 125° C
35 A VD S 2 VDS(on),VG S = 10 V
1.1 1.3 V VG S = 10 V, ID = 20 A
R DS(on) Static Drain-Source On-State
Resistance1
0.55 0.07
VG S = 10 V, ID = 20 A
R DS(on) Static Drain-Source On-State
Resistance1
1.0 0.12
VG S = 10 V, ID = 20 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
C iss Input Capacitance
C oss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
9.0
2700
1300
470
28
45
100
50
S(W ) VD S 2 VDS(on),ID = 20 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 30 V, ID @ 20 A
ns Rg = 5.0 W ,VG = 10V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
- 40 A
- 160 A
Modified MOSPOWER
symbol showing
G
the integral P-N
Junction rectifier.
D
S
VSD Diode Forward Voltage1
tr Reverse Recovery Time
-2.5 V TC = 25 C,IS = -40 A, VG S = 0
TJ = 150 C,IF =IS,
400 ns
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM250A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
VG S = 0,
200 V
ID = 250 mA
2.0 4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = + 20 V
-100 nA VG S = - 20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
VD S = 0.8 Max. Rat., VG S = 0,
0.2 1.0 m A
TC = 125° C
30 A VD S 2 VDS(on),VG S = 10 V
1.36 1.60 V VG S = 10 V, ID = 16 A
R DS(on) Static Drain-Source On-State
Resistance1
.085 .100
VG S = 10 V, ID = 16 A
R DS(on) Static Drain-Source On-State
Resistance1
0.15 0.18
VG S = 10 V, ID = 16 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
C iss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
10.0
2400
600
250
25
60
85
38
S(W ) VD S 2 VDS(on),ID = 16 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 75 V, ID @ 16 A
ns Rg = 5.0 W ,VG S = 10V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
- 30 A
- 120 A
Modified MOSPOWER
symbol showing
G
the integral P-N
Junction rectifier.
D
S
VSD Diode Forward Voltage1
tr Reverse Recovery Time
-2
350
V TC = 25 C,IS = -30 A, VG S = 0
TJ = 150 C,IF =IS,
ns
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.


Part Number COM350A
Description (COM150A - COM450A) Power MOSFET
Maker International Rectifier
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COM350A Datasheet PDF






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