ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM150A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
VG S = 0,
100 V
ID = 250 mA
2.0 4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = +20 V
- 100 nA VG S = -20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
VD S = 0.8 Max. Rat., VG S = 0,
0.2 1.0 m A
TC = 125° C
35 A VD S 2 VDS(on),VG S = 10 V
1.1 1.3 V VG S = 10 V, ID = 20 A
R DS(on) Static Drain-Source On-State
Resistance1
0.55 0.07
VG S = 10 V, ID = 20 A
R DS(on) Static Drain-Source On-State
Resistance1
1.0 0.12
VG S = 10 V, ID = 20 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
C iss Input Capacitance
C oss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
9.0
2700
1300
470
28
45
100
50
S(W ) VD S 2 VDS(on),ID = 20 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 30 V, ID @ 20 A
ns Rg = 5.0 W ,VG = 10V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
- 40 A
- 160 A
Modified MOSPOWER
symbol showing
G
the integral P-N
Junction rectifier.
D
S
VSD Diode Forward Voltage1
tr Reverse Recovery Time
-2.5 V TC = 25 C,IS = -40 A, VG S = 0
TJ = 150 C,IF =IS,
400 ns
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)
STATIC P/N COM250A
Parameter
Min. Typ. Max. Units Test Conditions
B VDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IG S S R
ID S S
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
VG S = 0,
200 V
ID = 250 mA
2.0 4.0 V VD S = VG S,ID = 250 mA
100 nA VG S = + 20 V
-100 nA VG S = - 20 V
0.1 0.25 m A VDS = Max. Rat., VG S = 0
VD S = 0.8 Max. Rat., VG S = 0,
0.2 1.0 m A
TC = 125° C
30 A VD S 2 VDS(on),VG S = 10 V
1.36 1.60 V VG S = 10 V, ID = 16 A
R DS(on) Static Drain-Source On-State
Resistance1
.085 .100
VG S = 10 V, ID = 16 A
R DS(on) Static Drain-Source On-State
Resistance1
0.15 0.18
VG S = 10 V, ID = 16 A,
TC = 125 C
DYNAMIC
gfs Forward Transductance1
C iss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
10.0
2400
600
250
25
60
85
38
S(W ) VD S 2 VDS(on),ID = 16 A
pF VG S = 0
pF VD S = 25 V
pF f = 1 MHz
ns VD D = 75 V, ID @ 16 A
ns Rg = 5.0 W ,VG S = 10V
ns (MOSFET switching times are
essentially independent of
ns operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
IS M Source Current1
(Body Diode)
- 30 A
- 120 A
Modified MOSPOWER
symbol showing
G
the integral P-N
Junction rectifier.
D
S
VSD Diode Forward Voltage1
tr Reverse Recovery Time
-2
350
V TC = 25 C,IS = -30 A, VG S = 0
TJ = 150 C,IF =IS,
ns
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
