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International Rectifier Electronic Components Datasheet

CPU165MU Datasheet

IGBT SIP MODULE Ultra-Fast IGBT

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PD - 5.029
IGBT SIP MODULE
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Product Summary
Output Current in a Typical 20 kHz Motor Drive
10 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
CPU165MU
Ultra-Fast IGBT
1,2
4 Q1
5
9 Q2
D1
6,7
D2
11,12
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
33
17
100
100
15
100
±20
2500
83
33
-40 to +150
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
IMS-1
Units
V
A
V
VRMS
W
°C
Thermal Resistance
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Parameter
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink,flat,greased surface
Weight of module
C-733
Typ.
0.1
20 (0.7)
Max.
1.5
2.0
Units
°C/W
g (oz)
Revision 1
To Order


International Rectifier Electronic Components Datasheet

CPU165MU Datasheet

IGBT SIP MODULE Ultra-Fast IGBT

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CPU165MU
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.60 — V/°C VGE = 0V, IC = 1.0mA
— 1.8 2.3
IC = 17A
VGE = 15V
— 2.2 — V IC = 33A
See Fig. 2, 5
— 1.6 —
IC = 17A, T J = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
16 24 — S VCE = 100V, I C = 27A
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, T J = 150°C
— 1.3 1.7 V IC = 25A
See Fig. 13
— 1.2 1.5
IC = 25A, T J = 150°C
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 108 140
— 17 21
IC = 27A
nC VCC = 400V
— 52 70
See Fig. 8
— 23 —
TJ = 25°C
— 28 — ns IC = 27A, VCC = 480V
— 100 200
VGE = 15V, R G = 5.0
— 45 140
Energy losses include "tail" and
— 0.76 —
diode reverse recovery.
— 0.26 — mJ See Fig. 9, 10, 11, 18
— 1.0 2.0
— 24 —
TJ = 150°C, See Fig. 9, 10, 11, 18
— 27 —
— 180 —
ns IC = 27A, VCC = 480V
VGE = 15V, R G = 5.0
— 130 —
Energy losses include "tail" and
— 3.7 — mJ diode reverse recovery.
— 2900 —
— 330 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 41 —
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C See Fig.
— 105 160
— 4.5 10
TJ = 125°C
14
A TJ = 25°C See Fig.
IF = 25A
— 8.0 15
TJ = 125°C
15
— 112 375 nC TJ = 25°C See Fig.
V R = 200V
— 420 1200
TJ = 125°C
16
— 250 — A/µs TJ = 25°C See Fig.
di/dt = 200A/µs
— 160 —
TJ = 125°C 17
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
C-734
Pulse width 5.0µs,
single shot.
To Order


Part Number CPU165MU
Description IGBT SIP MODULE Ultra-Fast IGBT
Maker International Rectifier
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CPU165MU Datasheet PDF






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