F3205Z Datasheet | International Rectifier

Features - - - - - Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V RDS(on) = 6.5mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Max. 110 78 75 440 170 Units ™ PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) W W/°C V m J A m J d 1.1 ± 20 IAR EAR TJ TSTG Avalanche Current Ù h 180 250 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient y y Typ. - - - 0.50 - - - Max. - - -...