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International Rectifier Electronic Components Datasheet

F3710S Datasheet

IRF3710S

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l Advanced Process Technology
l Surface Mount (IRF3710S)
l Low-profile through-hole (IRF3710L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -91310C
IRF3710S/L
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 0.025
ID = 57A
S
D 2 Pak
T O -26 2
Max.
57
40
180
3.8
200
1.3
± 20
530
28
20
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98
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International Rectifier Electronic Components Datasheet

F3710S Datasheet

IRF3710S

No Preview Available !

www.DataSheet.co.kr
IRF3710S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.12 –––
––– 0.025
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
––– 190
––– 26
––– 82
14 –––
59 –––
58 –––
48 –––
7.5 –––
3000 –––
640 –––
330 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA…
VGS = 10V, ID = 28A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28A…
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 28A
VDS = 80V
VGS = 10V, See Fig. 6 and 13 „…
VDD = 50V
ID = 28A
RG = 2.5
RD = 1.7Ω, See Fig. 10 „…
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) …
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 57
showing the
––– ––– 180 A integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „
––– 210 320 ns TJ = 25°C, IF = 28A
––– 1.7 2.6 µC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ VDD = 25V, starting TJ = 25°C, L = 1.4mH
RG = 25, IAS = 28A. (See Figure 12)
… Uses IRF3710 data and test conditions
ƒ ISD 28A, di/dt 460A/µs, VDD V(BR)DSS,
TJ 175°C
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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Part Number F3710S
Description IRF3710S
Maker International Rectifier
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F3710S Datasheet PDF






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