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International Rectifier Electronic Components Datasheet

F3711S Datasheet

IRF3711S

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PD- 94062B
SMPS MOSFET
IRF3711
IRF3711S
IRF3711L
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Buck Converters for
Server Processor Power Synchronous FET
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
ID
6.0m
110A
Benefits
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3711
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
D2Pak
IRF3711S
Max.
20
± 20
110
69
440
120
3.1
0.96
-55 to + 150
TO-262
IRF3711L
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
°C/W
Notes through are on page 11
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1
11/15/01


International Rectifier Electronic Components Datasheet

F3711S Datasheet

IRF3711S

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IRF3711/3711S/3711L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
–––
Static Drain-to-Source On-Resistance –––
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
1.0
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.022 –––
4.7 6.0
6.2 8.5
––– 3.0
––– 20
––– 100
––– 200
––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
V VDS = VGS, ID = 250µA
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs Forward Transconductance
53 ––– –––
Qg Total Gate Charge
––– 29 44
Qgs Gate-to-Source Charge
––– 7.3 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 8.9 –––
Qoss
Output Gate Charge
––– 33 –––
td(on)
Turn-On Delay Time
––– 12 –––
tr Rise Time
––– 220 –––
td(off)
Turn-Off Delay Time
––– 17 –––
tf Fall Time
––– 12 –––
Ciss Input Capacitance
––– 2980 –––
Coss
Output Capacitance
––– 1770 –––
Crss Reverse Transfer Capacitance
––– 280 –––
Units
S
nC
ns
pF
Conditions
VDS = 16V, ID = 30A
ID = 15A
VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 10V
ID = 30A
RG = 1.8
VGS = 4.5V
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
460
30
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.88
0.82
50
61
48
65
Max.
110
440
1.3
–––
75
92
72
98
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 16A, VR=10V
di/dt = 100A/µs
TJ = 125°C, IF = 16A, VR=10V
di/dt = 100A/µs
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Part Number F3711S
Description IRF3711S
Maker International Rectifier
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F3711S Datasheet PDF






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