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International Rectifier Electronic Components Datasheet

F7207 Datasheet

IRF7207

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PD - 91879A
IRF7207
HEXFET® Power MOSFET
l Generation 5 Technology
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
www.DataSheetl4U.Fcoamst Switching
S1
S2
S3
G4
A
8D
7D
VDSS = -20V
6D
5 D RDS(on) = 0.06
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
T op V ie w
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
SO-8
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient…
Typ.
–––
Max.
50
Units
°C/W
1
6/5/00


International Rectifier Electronic Components Datasheet

F7207 Datasheet

IRF7207

No Preview Available !

IRF7207
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– -0.011 –––
––– ––– 0.06
––– ––– 0.10
V/°C
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -5.4A „
VGS = -2.7V, ID = -2.7A „
VGS(th)
Gate Threshold Voltage
-0.7 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance
8.3 ––– ––– S VDS = -10V, ID = -5.4A
www.DataSheet4IDUS.Scom
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = 12V
––– ––– 100
VGS = -12V
Qg Total Gate Charge
––– 15 22
ID = -5.4A
Qgs Gate-to-Source Charge
––– 2.2 3.3 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge
––– 5.7 8.6
VGS = -4.5V, „
td(on)
Turn-On Delay Time
––– 11 –––
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 24 ––– ns ID = -1.0A
––– 43 –––
RG = 6.0
tf Fall Time
––– 41 –––
RD = 10, „
Ciss Input Capacitance
––– 780 –––
VGS = 0V
Coss
Output Capacitance
––– 410 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance
––– 200 –––
ƒ = 1.0MHz,
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
42
50
Max.
-3.1
-43
-1.0
63
75
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -3.1A, VGS = 0V ƒ
TJ = 25°C, IF = -3.1A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 9.6mH
RG = 25, IAS = -5.4A.
ƒ ISD -5.4A, di/dt -79A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
… When mounted on 1 inch square copper board, t<10 sec
2 www.irf.com


Part Number F7207
Description IRF7207
Maker International Rectifier
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F7207 Datasheet PDF






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