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International Rectifier Electronic Components Datasheet

F7313 Datasheet

IRF7313

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PD - 91480B
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
IRF7313
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = 30V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.029
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy ‚
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30
± 20
6.5
5.2
30
2.5
2.0
1.3
82
Avalanche Current
IAR 4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
EAR
dv/dt
0.20
5.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
Symbol
RθJA
Limit
62.5
Units
°C/W
9/12/02


International Rectifier Electronic Components Datasheet

F7313 Datasheet

IRF7313

No Preview Available !

www.DataSheet4U.com
IRF7313
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.023 0.029
––– 0.032 0.046
VGS = 10V, ID = 5.8A „
VGS = 4.5V, ID = 4.7A „
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance
––– 14 ––– S VDS = 15V, ID = 5.8A
IDSS Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg Total Gate Charge
––– 22 33
ID = 5.8A
Qgs Gate-to-Source Charge
––– 2.6 3.9 nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge
––– 6.4 9.6
VGS = 10V, See Fig. 10 „
td(on)
Turn-On Delay Time
––– 8.1 12
VDD = 15V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 8.9 13
––– 26 39
ns ID = 1.0A
RG = 6.0
tf Fall Time
––– 17 26
RD = 15„
Ciss Input Capacitance
––– 650 –––
VGS = 0V
Coss Output Capacitance
––– 320 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 130 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.78
45
58
Max.
2.5
30
1.0
68
87
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
TJ = 25°C, IF = 1.7A
di/dt = 100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 10mH
RG = 25, IAS = 4.0A.
ƒ ISD 4.0A, di/dt 74A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
… Surface mounted on FR-4 board, t 10sec.


Part Number F7313
Description IRF7313
Maker International Rectifier
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