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International Rectifier Electronic Components Datasheet

F7751 Datasheet

IRF7751

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l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
VDSS
-30V
PD - 94002
IRF7751
HEXFET® Power MOSFET
RDS(on) max
35m@VGS = -10V
55m@VGS = -4.5V
ID
-4.5A
-3.8A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-4.5
-3.6
-18
1.0
0.64
0.008
±20
-55 to +150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
125
Units
°C/W
1
10/04/2000


International Rectifier Electronic Components Datasheet

F7751 Datasheet

IRF7751

No Preview Available !

www.DataSheet4U.com
IRF7751
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-30 ––– –––
––– 0.020 –––
––– ––– 35
––– ––– 55
V
V/°C
m
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -4.5A ‚
VGS = -4.5V, ID = -3.8A ‚
VGS(th)
Gate Threshold Voltage
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance
6.8 ––– ––– S VDS = -10V, ID = -4.5A
IDSS Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg Total Gate Charge
––– 29 44
ID = -4.5A
Qgs Gate-to-Source Charge
––– 5.5 ––– nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 5.0 –––
––– 13 20
VGS = -10V
VDD = -15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 16 24 ns ID = -1.0A
––– 155 233
RG = 6.0
––– 80 120
VGS = -10V‚
Ciss Input Capacitance
––– 1464 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 227 ––– pF VDS = -25V
––– 146 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.0
––– -18
––– -1.2
23 35
19 28
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
2 www.irf.com


Part Number F7751
Description IRF7751
Maker International Rectifier
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