Datasheet Details
| Part number | F9530N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 126.95 KB |
| Description | IRF9530N |
| Datasheet | F9530N_InternationalRectifier.pdf |
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Overview: .DataSheet.in PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.
| Part number | F9530N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 126.95 KB |
| Description | IRF9530N |
| Datasheet | F9530N_InternationalRectifier.pdf |
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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F9530S | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| F9540N | IRF9540N |