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International Rectifier Electronic Components Datasheet

F9540N Datasheet

IRF9540N

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l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 91437B
IRF9540N
HEXFET® Power MOSFET
D
VDSS = -100V
RDS(on) = 0.117
ID = -23A
S
TO-220AB
Max.
-23
-16
-76
140
0.91
± 20
430
-11
14
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98


International Rectifier Electronic Components Datasheet

F9540N Datasheet

IRF9540N

No Preview Available !

www.DataSheet4U.com
IRF9540N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 ––– ––– V
––– -0.11 ––– V/°C
––– ––– 0.117
-2.0 ––– -4.0 V
5.3 ––– ––– S
––– ––– -25 µA
––– ––– -250
––– ––– 100
nA
––– ––– -100
––– ––– 97
––– ––– 15 nC
––– ––– 51
––– 15 –––
––– 67 –––
ns
––– 51 –––
––– 51 –––
––– 4.5 –––
––– 7.5 –––
nH
––– 1300 –––
––– 400 –––
––– 240 –––
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -11A „
VDS = VGS, ID = -250µA
VDS = -50V, ID = -11A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -11A
VDS = -80V
VGS = -10V, See Fig. 6 and 13 „
VDD = -50V
ID = -11A
RG = 5.1
RD = 4.2Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -23
––– ––– -76
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– -1.6 V TJ = 25°C, IS = -11A, VGS = 0V „
––– 150 220 ns TJ = 25°C, IF = -11A
––– 830 1200 nC di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 7.1mH
RG = 25, IAS = -11A. (See Figure 12)
ƒ ISD -11A, di/dt -470A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.


Part Number F9540N
Description IRF9540N
Maker International Rectifier
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F9540N Datasheet PDF






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