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International Rectifier Electronic Components Datasheet

F9Z34NL Datasheet

IRF9Z34NL

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l Advanced Process Technology
l Surface Mount (IRF9Z34NS)
l Low-profile through-hole (IRF9Z34NL)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
www.DataeSxhtreeemt4eUly.colomw on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for low-
profile applications.
Absolute Maximum Ratings
G
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V…
Continuous Drain Current, VGS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.1525
IRF9Z34NS/L
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 0.10
ID = -19A
S
D 2 Pak
T O -262
Max.
-19
-14
-68
3.8
68
0.45
± 20
180
-10
6.8
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97


International Rectifier Electronic Components Datasheet

F9Z34NL Datasheet

IRF9Z34NL

No Preview Available !

IRF9Z34NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
www.DataSQhgedet4U.com Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 ––– ––– V VGS = 0V, ID = -250µA
––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA…
––– ––– 0.10 VGS = -10V, ID = -10A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
4.2 ––– ––– S VDS = -25V, ID = -10A…
––– ––– -25 µA VDS = -55V, VGS = 0V
––– ––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 35
ID = -10A
––– ––– 7.9
––– ––– 16
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13 „…
––– 13 –––
VDD = -28V
––– 55 ––– ns ID = -10A
––– 30 –––
RG = 13
––– 41 –––
RD = 2.6Ω, See Fig. 10 „
Between lead,
––– 7.5 ––– nH and center of die contact
––– 620 –––
VGS = 0V
––– 280 ––– pF VDS = -25V
––– 140 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -19
––– ––– -68
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– -1.6 V TJ = 25°C, IS = -10A, VGS = 0V „
––– 54 82 ns TJ = 25°C, IF = -10A
––– 110 160 nC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ Starting TJ = 25°C, L = 3.6mH
RG = 25, IAS = -10A. (See Figure 12)
… Uses IRF9Z34N data and test conditions
ƒ ISD -10A, di/dt -290A/µs, VDD V(BR)DSS,
TJ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.


Part Number F9Z34NL
Description IRF9Z34NL
Maker International Rectifier
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F9Z34NL Datasheet PDF






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