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International Rectifier Electronic Components Datasheet

FA57SA50LC Datasheet

HEXFET Power MOSFET

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l Fully Isolated Package
l Easy to Use and Parallel
l Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
l Simple Drive Requirements
l Low Gate Charge Device
l Low Drain to Case Capacitance
l Low Internal Inductance
G
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 watts. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
VISO
Operating Junction and
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS)
Mounting torque, M4 srew
Thermal Resistance
RθJC
RθCS
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
PD - 91650A
FA57SA50LC
HEXFET® Power MOSFET
D VDSS = 500V
RDS(on) = 0.08
ID = 57A
S
S O T -2 2 7
Max.
57
36
228
625
5.0
± 20
725
57
62.5
3.0
-55 to + 150
2.5
1.3
Typ.
–––
0.05
Max.
0.20
–––
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
kV
N•m
Units
°C/W
1
2/1/99


International Rectifier Electronic Components Datasheet

FA57SA50LC Datasheet

HEXFET Power MOSFET

No Preview Available !

FA57SA50LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ls
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
500 ––– ––– V VGS = 0V, ID = 1.0mA
––– 0.62 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.08 VGS = 10V, ID = 34A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
43 ––– ––– S VDS = 50V, ID = 34A
––– ––– 50 µ A VDS = 500V, VGS = 0V
––– ––– 500
VDS = 400V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 225 338
ID = 57A
––– 51 77 nC VDS = 400V
––– 98 147
VGS = 10V, See Fig. 6 and 13 „
––– 32 –––
VDD = 250V
––– 152 ––– ns ID = 57A
––– 108 –––
RG =2.0(Internal)
––– 118 –––
RD = 4.3Ω, See Fig. 10 „
––– 5.0 ––– nH Between lead,
and center of die contact
––– 10000 –––
––– 1500 –––
VGS = 0V
pF VDS = 25V
––– 50 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 57
––– ––– 228
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C, IS = 57A, VGS = 0V „
––– 901 1351 ns TJ = 25°C, IF = 57A
––– 15 23 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 446µH
RG = 25, IAS = 57A. (See Figure 12)
ƒ ISD 57A, di/dt 200A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
2 www.irf.com


Part Number FA57SA50LC
Description HEXFET Power MOSFET
Maker International Rectifier
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