FA57SA50LC mosfet equivalent, hexfet power mosfet.
1.5 08 ) 3 7 .8 0 ( 1.4 88 ) -A 3 6.2 5 ( .24 6 ) 1 2.50 ( .4 92 ) 2 5 .7 0 ( 1.0 12 ) 2 5 .2 0 ( .9 9 2 ) -B 1 7 .50 ( .29 5 ) 3 0 .2 0 ( 1 .1 89 ) 2 9 .8 0 ( 1 .1 73 ).
at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercia.
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