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International Rectifier Electronic Components Datasheet

FAG50 Datasheet

IRFAG50

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PD - 90582
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
IRFAG50
1000V, N-CHANNEL
Product Summary
Part Number BVDSS
IRFAG50
1000V
RDS(on)
2.0
ID
5.6Α
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
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Parameter
ID @ VGS = 0V, TC = 25°C Continuous Drain Current
ID @ VGS = 0V, TC = 100°C
IDM
Continuous Drain Current
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Units
5.6
3.5 A
22
150 W
1.2 W/°C
±20 V
860 mJ
5.6 A
15 mJ
1.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/24//01


International Rectifier Electronic Components Datasheet

FAG50 Datasheet

IRFAG50

No Preview Available !

IRFAG50
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
*Equipment Limitation
Min
1000
2.0
5.2
88
8.8
48
Typ Max Units
—— V
1.4 — V/°C
— 2.0
— 2.3
— 4.0 V
— — S( )
— 25
— 250 µA
— 100 nA
— -100
— 200
— 20 nC
— 110
— 30
— 44
ns
— 210
— 60
6.1 — nH
2400
240
80
pF
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS =10V, ID =3.5A
VGS = 10V, ID =5.6A
VDS = VGS, ID =250mA
VDS > 15V, IDS =3.5A
VDS=800V, VGS=0V
VDS =800V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS= 10V, ID=5.6A
VDS =500V
VDD =400V*, ID =5.6A,
RG =2.35
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
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Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
— — 5.6
— — 22
A
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.8 V
— — 1200 nS
— — 8.4 µC
Tj = 25°C, IS =5.6A, VGS = 0V
Tj = 25°C, IF =5.6A, di/dt 100A/µs
VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 0.83
°C/W
— — 30
Test Conditions
Typical socket mount
www.irf.com


Part Number FAG50
Description IRFAG50
Maker International Rectifier
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