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International Rectifier Electronic Components Datasheet

FB42N20D Datasheet

IRFB42N20D

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PD- 94208
SMPS MOSFET IRFB42N20D
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
0.055
ID
44A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
44
31
180
2.4
330
2.2
± 30
2.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes  through … are on page 8
www.irf.com
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
1
5/7/01


International Rectifier Electronic Components Datasheet

FB42N20D Datasheet

IRFB42N20D

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IRFB42N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
200 ––– ––– V
––– 0.26 ––– V/°C
––– ––– 0.055
3.0 ––– 5.5 V
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 26A „
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
21 ––– ––– S VDS = 50V, ID = 26A
Qg Total Gate Charge
––– 91 140
ID = 26A
Qgs Gate-to-Source Charge
––– 24 36 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge
––– 43 65
VGS = 10V,
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 100V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 69 ––– ns ID = 26A
––– 29 –––
RG = 1.8
tf Fall Time
––– 32 –––
VGS = 10V „
Ciss Input Capacitance
––– 3430 –––
VGS = 0V
Coss Output Capacitance
––– 530 –––
VDS = 25V
Crss Reverse Transfer Capacitance
––– 100 ––– pF ƒ = 1.0MHz
Coss Output Capacitance
––– 5310 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance
––– 210 –––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance
––– 400 –––
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
510
26
33
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 44
––– ––– 180
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 26A, VGS = 0V „
––– 220 330 ns TJ = 25°C, IF = 26A
––– 1860 2790 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number FB42N20D
Description IRFB42N20D
Maker International Rectifier
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FB42N20D Datasheet PDF






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