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International Rectifier Electronic Components Datasheet

FB9N60A Datasheet

IRFB9N60A

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PD - 91811
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Fast Switching
l Ease of Paraleling
l Simple Drive Requirements
IRFB9N60A
HEXFET® Power MOSFET
D
VDSS = 600V
RDS(on) = 0.75
G
ID = 9.2A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
9.2
5.8
37
170
1.3
± 30
290
9.2
17
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/7/98


International Rectifier Electronic Components Datasheet

FB9N60A Datasheet

IRFB9N60A

No Preview Available !

www.DataSheet4U.com
IRFB9N60A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
Conditions
600 ––– ––– V VGS = 0V, ID = 250µA
––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.75 VGS = 10V, ID = 5.5A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
5.5 ––– ––– S VDS = 25V, ID = 5.5A
––– ––– 25
––– ––– 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
––– ––– 49
––– ––– 13
––– ––– 20
––– 13 –––
ID = 9.2A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 300V
––– 25 –––
––– 30 –––
––– 22 –––
––– 4.5 –––
––– 7.5 –––
ns ID = 9.2A
RG = 9.1
RD = 35.5,See Fig. 10 „
Between lead,
6mm (0.25in.)
nH
from package
G
and center of die contact
D
S
––– 1400 –––
VGS = 0V
––– 180 –––
VDS = 25V
––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1957 –––
––– 49 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
––– 96 –––
VGS = 0V, VDS = 0V to 480V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 6.8mH
RG = 25, IAS = 9.2A. (See Figure 12)
ƒ ISD 9.2A, di/dt 50A/µs, VDD V(BR)DSS,
TJ 150°C
2
Min. Typ. Max. Units
Conditions
––– ––– 9.2
––– ––– 37
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „
––– 530 800 ns TJ = 25°C, IF = 9.2A
––– 3.0 4.4 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
www.irf.com


Part Number FB9N60A
Description IRFB9N60A
Maker International Rectifier
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